semiconductor parameter
英 [ˌsemikənˈdʌktə(r) pəˈræmɪtə(r)]
美 [ˈsemikəndʌktər pəˈræmɪtər]
网络 半导体参数
双语例句
- This paper analyzes the work state of a semiconductor refrigeration miniature airconditioning fan and derives the work state parameter equations.
本文对半导体致冷（热）风扇的工作状态进行了分析，推导出了工作状态参数方程组，建立了计算机仿真计算模型。 - Semiconductor device parameter stability
半导体器件参数稳定性 - The output current stability of semiconductor Laser Diode ( LD) is an important parameter for judging its performance.
半导体激光器（LD）驱动器的输出电流稳定度是衡量其性能的一个重要指标。 - The relation between numerical aperture and the passing power rate of semiconductor laser in collimating system has been studied through the parameter equations of fundamental mode Gaussian beam.
使用基模高斯光束参量方程对半导体激光器光束准直系统的光功率透过率与准直系统的数值孔径的关系进行了研究； - A light addressable potentiometer sensor ( LAPS) is based on the electrolyte insulator semiconductor structure ( EIS), which has the optical, mechanical and electronics parts merged into an organic whole. It is mainly used to do measurement of bio chemical multi parameter.
光寻址电位传感器（LAPS）是一种基于电解质溶液绝缘层半导体（EIS）结构的光、机、电一体化的传感器系统，主要用于进行生物化学多参数测量。 - In semiconductor manufacturing process, the distributing of the process parameter will affect the structural variations of devices and leads to variations in device characteristics and circuit performances.
集成电路工艺过程中，工艺参数的分布会引起器件结构参数和电学参数变化。 - A new approach for the CPA treatment of band structure of semiconductor alloys based on the LMTO-ASA-VCA method is suggested, in which no adjustable parameter is needed.
本文提出一种无须引入可调参数的基于LMTO能带的相干势近似（CPA）计算方法。 - A development of infrared focal plane array ( IRFPA) complementary metal oxide semiconductor ( CMOS) readout integrated circuit ( ROIC) is introduced. The circuit principle of ROIC, time sequence of multiplexer, circuit parameter, layout design and technology analysis are described.
介绍了一种红外焦平面阵列（IRFPA）互补金属氧化物半导体（CMOS）读出集成电路（ROIC）的研制方案，叙述了读出电路的电路原理及工作时序、电路参数设计、版图设计及工艺分析。 - Temperature's Effect on Semiconductor Laser Performance Parameter
温度对半导体激光器性能参数的影响 - ZnO is a ⅱ-ⅵ compound semiconductor with a direct wide band gap of 3.3 eV. Its crystal structure, lattice parameter and band gap are quite close to those of GaN.
ZnO是一种直接带隙宽禁带Ⅱ-Ⅵ族化合物半导体材料，其晶体结构、晶格常数和禁带宽度都与GaN非常接近。 - In terms of the practical process of carrier recombinations in travelling wave semiconductor optical amplifier, the expression of saturation parameter has been revised
根据行波半导体光放大器中载流子复合的实际过程，对放大器饱和参量的表达式作了适当的修正 - Implementation of Genetic Algorithm in Semiconductor Device Parameter Extraction System
遗传算法在半导体器件参数提取软件中的实现 - Molecular Orbital Method for Semiconductor Compound Range Parameter Calculation
半导体化合物靶中射程参数的分子轨道法处理 - After our research on local optimization strategy of semiconductor device parameter extraction, we propose to use a language to describe optimization strategies and design a specific strategy description larguage.
针对半导体器件模型参数局部优化的提取策略及其实现方法，提出了采用语言描述策略的观点，设计了具体的策略描述语言。 - The emission and receive of semiconductor pulse laser are researched, based on the laser rangefinder theory, parameter measure and character analyzing of semiconductor pulse laser.
通过对基于脉冲激光测距原理的半导体脉冲激光器的参数测量分析，研究了半导体脉冲激光的发射和接收。 - The mathematical model of phase regenerator is established theoretically and its system structure is analyzed; phase regeneration system based on semiconductor optical amplifier is studied via theoretical derivation, design and construction of simulation platform and a series of parameter optimization.(?)
（？）从理论上建立了相位再生器的数学模型，分析了其系统构成，对基于半导体光放大器的相位再生系统进行了理论推导、仿真平台设计和搭建及一系列参数优化。 - On the basis of combination of theoretical analysis and data processing, this paper study the impacts of the performance of semiconductor lasers and the parameter settings of chaotic laser source on random sequences.
本文在理论和实际相结合的基础上，发现半导体激光器的性能和混沌激光源的外部参数都会对随机序列产生影响。 - Regardless how sophisticated a semiconductor device model is, the model is useless and inaccurate if the viable parameter extraction method is not in place.
无论一个半导体器件的模型有多么复杂，如果没有行之有效的参数提取方法，那么这个模型的正确性与可操作性也无法得到保证。 - High-resolution x-ray diffractometer is a powerful analysis tool on semiconductor epitaxial layer. Using it people can measure crystal parameter, strain, composition and stress of epitaxial layer.
高分辨力x射线衍射仪是半导体外延层结构分析的有力工具，利用它可以确定外延层的晶格常数、应变结构、组份和应力等。 - The probe station is the intermediate test equipment for semiconductor process line. Connected with the test instrument, electrical parameter tests and functional tests for integrated circuits and various transistor cores can be completed automatically.
探针测试台是半导体工艺线上的中间测试设备，与测试仪器连接后，能自动完成对集成电路及各种晶体管芯的电参数测试及功能测试。